Amanote Research

Amanote Research

    RegisterSign In

Highly P-Doped Regions in Silicon Solar Cells Quantitatively Analyzed by Small Angle Beveling and Micro-Raman Spectroscopy

Journal of Applied Physics - United States
doi 10.1063/1.3236571
Full Text
Open PDF
Abstract

Available in full text

Categories
AstronomyPhysics
Date

October 1, 2009

Authors
M. BeckerU. GöseleA. HofmannS. Christiansen
Publisher

AIP Publishing


Related search

Micro Raman Spectroscopy Analysis of Doped Amorphous and Microcrystalline Silicon Thin Film Layers and Its Application in Heterojunction Silicon Wafer Solar Cells

Transactions of the Materials Research Society of Japan
2014English

Dislocations in Laser-Doped Silicon Detected by Micro-Photoluminescence Spectroscopy

Applied Physics Letters
AstronomyPhysics
2015English

Formation of Porous Silicon on a Highly Doped P-Type Monocrystalline Silicon

Doklady BGUIR
2019English

Probing Fracture of Silicon Nitride by in Situ Microscopic Raman Spectroscopy

Journal of the Ceramic Society of Japan
1998English

Biological Applications of Micro-Raman Spectroscopy

Microscopy and Microanalysis
Instrumentation
2003English

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

Physical Review X
AstronomyPhysics
2018English

Development of Raman Micro-Spectroscopy to Characterize Human Ovarian Cancer Cells

English

Estimation of DLC Wear Process by Micro Laser Raman Spectroscopy

Tribology Online
SurfacesFilmsCoatings
2008English

Molecular Profiling of Lipid Droplets Inside HuH7 Cells With Raman Micro-Spectroscopy

2020English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy