High Mobility Holes in a Strained Ge Quantum Well Grown on a Thin and Relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) Virtual Substrate
Applied Physics Letters - United States
doi 10.1063/1.3090034
Full Text
Open PDFAbstract
Available in full text
Date
March 2, 2009
Authors
Publisher
AIP Publishing