An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.130.1193
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Polarization Properties of Few-Layer Graphene on Silicon Substrate in Terahertz Frequency Range

SN Applied Sciences
2019English

Terahertz Plasmonic Switch Based on Periodic Array of Graphene/Silicon

Scientia Iranica
2017English

Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate

Journal of the Korean Physical Society
AstronomyPhysics
2007English

Terahertz-Bandwidth Photonic Temporal Differentiator Based on a Silicon-On-Isolator Directional Coupler

Optics Letters
OpticsAtomicMolecular Physics,
2015English

Uncooled Detectors of Continuum Terahertz Radiation

Journal of Microwaves, Optoelectronics and Electromagnetic Applications
Electronic EngineeringElectrical
2011English

Long-Term Spectral Responsivity Stability of Predictable Quantum Detectors

2019English

MOSFET Detectors in Quality Assurance of Tomotherapy Treatments

English

Development of a Nano-Al∕CuO Based Energetic Material on Silicon Substrate

Applied Physics Letters
AstronomyPhysics
2007English

Silicon PIN Photodiode-Based Radon Detectors for an Underground Experiment Environment.

2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy