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Bipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-Ethylenedioxythiophene):poly(styrenesulfonate) Thin Film
Applied Physics Letters
- United States
doi 10.1063/1.2960998
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Categories
Astronomy
Physics
Date
July 21, 2008
Authors
Heonjun Ha
Ohyun Kim
Publisher
AIP Publishing