Charge Trapping Mechanism Leading to Sub-60-mV/Decade-Swing FETs

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2017.2703914
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

InGaAs Tunnel FET With Sub-Nanometer EOT and Sub-60 mV/dec Sub-Threshold Swing at Room Temperature

Applied Physics Letters
AstronomyPhysics
2016English

Carbon Nanotubes: From Growth, Placement and Assembly Control to 60mV/Decade and Sub-60 mV/decade Tunnel Transistors

2006English

Sub-60 mV/decade Switching in 2D Negative Capacitance Field-Effect Transistors With Integrated Ferroelectric Polymer

Applied Physics Letters
AstronomyPhysics
2016English

An Analytical Subthreshold Current/Swing Model for Junctionless Cylindrical Nanowire FETs (JLCNFETs)

Facta universitatis - series: Electronics and Energetics
2013English

[2Fe2S]铁硫蛋白活性中心模型[Fe<SUB>2</Sub>s<sub>2</Sub> (SR) <sub>4</Sub>]<sup>2–</Sup> (R= —H, —CH<SUB>3</SUB>)的局部自旋探讨

Science in China Series B-Chemistry (in Chinese)
2007English

<em>o</Em>-, <em>m</Em>-, <em>p</Em>-IC<sub>6</Sub>H<sub>4</Sub>OCH<sub>3</Sub>的电子结构和取代基效应

Science in China Series B-Chemistry (in Chinese)
2009English

Cl<SUB>2</SUB>+2HBr=2HCl+Br<SUB>2</Sub>反应的机理和应用

Science in China Series B-Chemistry (in Chinese)
2001English

MRCI及其近似方法下C<SUB>2</SUB>分子<EM>X</EM><SUP>1</SUP><EM>Σ</EM><SUP>+</SUP><SUB><EM>g</EM></SUB>, <em>b</Em><sup>1</SUP><EM>Δ<SUB>g</Sub></Em>和 <br><em>b</Em>′<sup>1</Sup><em>σ</Em><sup>+</SUP><EM><SUB>g</Sub></Em>态的势能曲线 <BR>

Science in China Series B-Chemistry (in Chinese)
2007English

An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy