A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

IEEE Transactions on Microwave Theory and Techniques - United States
doi 10.1109/tmtt.2009.2025430
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Phase Predistortion of a Class-D Outphasing RF Amplifier in 90 Nm CMOS

IEEE Transactions on Circuits and Systems II: Express Briefs
Electronic EngineeringElectrical
2011English

A 4-W Doherty Power Amplifier in GaN MMIC Technology for 15-GHz Applications

IEEE Microwave and Wireless Components Letters
Electronic EngineeringElectricalCondensed Matter Physics
2017English

WCDMA Outphasing Power Amplifier With a Software Defined Transmitter/Receiver Architecture for Determination of the Predistortion Function

Advances in Radio Science
2006English

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Progress In Electromagnetics Research B
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2017English

Quantum Brain Storm Optimization of GaN Power Amplifier Design

DEStech Transactions on Computer Science and Engineering
2018English

An X-Band GaN Combined Solid-State Power Amplifier

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2009English

A Broadband Transimpedance Amplifier With Optimum Bias Network

2016English

Optimum Power Allocation for Multiuser OFDM With Arbitrary Signal Constellations

IEEE Transactions on Communications
Electronic EngineeringElectrical
2008English

Analysis of Broadband Gan Switch Mode Class-E Power Amplifier

Progress In Electromagnetics Research Letters
OpticalElectronicMagnetic Materials
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy