Improvement in the Asymmetric VFB Shift of Poly-Si/HfSiON/Si by Inserting Oxygen Diffusion Barrier Layers Into the Interfaces
doi 10.7567/ssdm.2005.a-2-5
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2005
Authors
Publisher
The Japan Society of Applied Physics