Amanote Research
Register
Sign In
Self-Stressing Structures for Wafer-Level Oxide Breakdown to 200 MHz
doi 10.1109/irws.1994.515837
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
E.S. Snyder
D.M. Tanner
M.R. Bowles
S.E. Swanson
C.H. Anderson
J.P. Perry
Publisher
IEEE
Related search
Development of Self-Compacting, Self-Stressing Concrete for Pipe-Concrete Columns
Stroitel'nye Materialy
Triode Magnetron Injection Gun for 132 GHZ Gyrotron for 200 MHZ DNP-NMR Application
Progress In Electromagnetics Research C
Optical
Electronic
Magnetic Materials
An Experiment for Self-Stressing and Creep of Expansive Cement Concrete
Proceedings of the Japan Society of Civil Engineers
Interstellar Medium Studies Below 200 MHz: LOFAR Single Stations and NenuFAR
Proceedings of the International Astronomical Union
Astrophysics
Astronomy
Planetary Science
Space
Shape Evolution of Antimony Oxychloride From Sheaf-Like to Quasi-Wafer Structures
Chinese Science Bulletin
A 350 MHz, 200 kW CW, Multiple Beam Inductive Output Tube - Final Report
Wafer-Level Fabrication Process for Fully Encapsulated Micro-Supercapacitors With High Specific Energy
Microsystem Technologies
Electronic Engineering
Condensed Matter Physics
Nanoscience
Hardware
Optical
Electrical
Architecture
Magnetic Materials
Nanotechnology
Electronic
High-Efficient Chip to Wafer Self-Alignment and Bonding for Flexible and Size-Free MEMS-IC Integration
IEEJ Transactions on Sensors and Micromachines
Electronic Engineering
Electrical
Mechanical Engineering
Design and Use of Wafer Level Fluidic Packaging for Surface Acoustic Wave Sensors
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum
