Hydrogen-Induced Changes in the Breakdown Voltage of InP HEMTs

IEEE Transactions on Device and Materials Reliability - United States
doi 10.1109/tdmr.2005.846825
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Carrier-Induced Refractive Index Changes in InP-based Circular Microresonators for Low-Voltage High-Speed Modulation

IEEE Photonics Technology Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2005English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
1992English

InAlAs/InGaAs/InP HEMTs С Композитным Каналом И Улучшенными Пробивными Характеристиками

Журнал технической физики
2019English

Scalability of Sub-100 Nm InAs HEMTs on InP Substrate for Future Logic Applications

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2010English

Investigation on the AC Breakdown Voltage of RBDPO Olein

2014English

Raman Spectra From Symmetric Hydrogen Bonds in Water by High-Intensity Laser-Induced Breakdown

Scientific Reports
Multidisciplinary
2014English

Mixture Distribution Measurement Using Laser Induced Breakdown Spectroscopy in Hydrogen Direct Injection Stratified Charge

International Journal of Hydrogen Energy
Condensed Matter PhysicsEnergy EngineeringRenewable EnergyFuel TechnologySustainabilityPower Technologythe Environment
2009English

InP Nanopore Arrays for Photoelectrochemical Hydrogen Generation

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy