Hydrogen-Induced Band Gap Tuning of (InGa)(AsN)/GaAs Single Quantum Wells

Applied Physics Letters - United States
doi 10.1063/1.1376436
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Bandgap Renormalization Studies of N-Type GaAs/AlGaAs Single Quantum Wells

1997English

Strain-Inducedg-Factor Tuning in Single InGaAs/GaAs Quantum Dots

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Contactless Electroreflectance of GaInNAsSb∕GaAs Single Quantum Wells With Indium Content of 8%–32%

Journal of Applied Physics
AstronomyPhysics
2007English

Charged Exciton Dynamics in GaAs Quantum Wells

Physical Review B
1998English

Quantitative Study of Localization Effects and Recombination Dynamics in GaAsBi/GaAs Single Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2013English

Quantum Hall Stripes in High-Density GaAs/AlGaAs Quantum Wells

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Excitonic Transitions in GaInAs/GaAs Surface Quantum Wells

Le Journal de Physique IV
1993English

Optical Orientation of Electron Spins in GaAs Quantum Wells

Physical Review B
2005English

Well-Width Dependence of the Exciton-Phonon Scattering in Thin InGaAs/GaAs Single Quantum Wells

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy