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A Novel Technique of N/Sub 2/O-Treatment on NH/sub 3/-Nitrided Oxide as Gate Dielectric for nMOS Transistors
IEEE Transactions on Electron Devices
- United States
doi 10.1109/16.543026
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Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
January 1, 1996
Authors
X. Zeng
P.T. Lai
W.T. Ng
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
