Enhanced Formation of Ge Nanocrystals in Ge : SiO2layers by Swift Heavy Ions

Journal of Physics D: Applied Physics- United Kingdom

doi 10.1088/0022-3727/45/28/285302

Full Text

Abstract

Available in

Date

Authors

Publisher

IOP Publishing

Related search

Stable, Freestanding Ge Nanocrystals

Journal of Applied Physics
AstronomyPhysics
2005English

Structural Perturbations Within Ge Nanocrystals in Silica

Applied Physics Letters
AstronomyPhysics
2004English

Kinetics of Amorphization Induced by Swift Heavy Ions in Α-Quartz

Journal of Nuclear Materials
High Energy PhysicsMaterials ScienceEngineeringNuclear EnergyNuclear
2012English

Formation of Uniaxial Strained Ge via Control of Dislocation Alignment in Si/Ge Heterostructures

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Synthesis and Size Differentiation of Ge Nanocrystals in Amorphous SiO2

Applied Physics A: Materials Science and Processing
Materials ScienceChemistry
2005English

Ion-Irradiation-Induced Preferential Amorphization of Ge Nanocrystals in Silica

Physical Review B
2005English

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2018English

Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2018English

Hydrogenated Ge Nanocrystals: Band Gap Evolution With Increasing Size

Brazilian Journal of Physics
AstronomyPhysics
2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy