Investigation of 1.3-Μm GaInNAd Vertical-Cavity Surface-Emitting Lasers (VCSELs) Using Temperature, High-Pressure, and Modeling Techniques
IEEE Journal of Selected Topics in Quantum Electronics - United States
doi 10.1109/jstqe.2003.820913
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Date
September 1, 2003
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Institute of Electrical and Electronics Engineers (IEEE)