Growth of GaInTlAs Layers on InP by Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - United States
doi 10.1116/1.1359530
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Vacuum Society

Related search

Transport Properties of InAsxSb1−x(0≤x≤0.55) on InP Grown by Molecular‐beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
1990English

The Adsorption-Controlled Growth of LuFe2O4 by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2012English

Adsorption-Controlled Growth of BiMnO3 Films by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2010English

Epitaxial Growth of Magnetic Semiconductor EuO on Silicon by Molecular Beam Epitaxy

Crystal Research and Technology
Materials ScienceChemistryCondensed Matter Physics
2015English

Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy.

SHINKU
2000English

Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Molecular-Beam Epitaxy of the Half-Heusler Alloy NiMnSb on (In,Ga)As/InP (001)

Applied Physics Letters
AstronomyPhysics
2003English

Strong Localization in InGaN Layers With High in Content Grown by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2002English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

1992English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy