Stoichiometry Changes by Selective Vacancy Formation on (110) Surfaces of III–V Semiconductors: Influence of Electronic Effects

Journal of Chemical Physics - United States
doi 10.1063/1.1328412
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

III–V Compound Semiconductors

2016English

Electronic Structure of O-Vacancy in High-K Dielectrics and Oxide Semiconductors

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2011English

Fibonacci Superlattices of Narrow-Gap III-V Semiconductors

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
1995English

Supersonic Cluster Beams of III–V Semiconductors: GaxAsy

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
1986English

Swift-Heavy-Ion-Induced Damage Formation in III-V Binary and Ternary Semiconductors

Physical Review B
2010English

Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

Acta Physica Polonica A
AstronomyPhysics
2015English

Fröhlich Modes in Porous III-V Semiconductors

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2001English

Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

Acta Physica Polonica A
AstronomyPhysics
2015English

Buried Stressors in Nitride Semiconductors: Influence on Electronic Properties

Journal of Applied Physics
AstronomyPhysics
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy