Lateral Coherence Properties of Broad‐area Semiconductor Quantum Well Lasers

Journal of Applied Physics - United States
doi 10.1063/1.337629
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Effects of Injected Atomic Coherence in Broad-Area Lasers

Physical Review A
2005English

Quantum Coherence in Semiconductor Microlasers

2016English

Effective Numerical Integration of Traveling Wave Model for Edge‐emitting Broad‐area Semiconductor Lasers and Amplifiers

Mathematical Modeling and Analysis
ModelingAnalysisSimulation
2010English

Quantum Weak Turbulence With Applications to Semiconductor Lasers

Physica D: Nonlinear Phenomena
Nonlinear PhysicsApplied MathematicsMathematical PhysicsCondensed Matter PhysicsStatistical
1998English

Ultrabroadband Tunable External-Cavity Quantum Well Lasers

1990English

Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

Acta Physica Polonica A
AstronomyPhysics
2007English

Wavelength Switching of Asymmetric Dual Quantum Well Lasers

1989English

Dynamical Properties of Mutually Delayed Coupled Semiconductor Lasers

2004English

Self‐pulsating Lasers With Quantum Well Saturable Absorber

Applied Physics Letters
AstronomyPhysics
1995English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy