Interaction of Low-Energy Muons With Defect Profiles in Proton-Irradiated Si and 4H -SiC

Physical Review B - United States
doi 10.1103/physrevb.100.115202
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

Materials Science Forum
2010English

Charge State Switching of the Divacancy Defect in 4H -SiC

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Defect Dynamics in Proton Irradiated CH3NH3PbI3Perovskite Solar Cells

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2017English

Hole Traps and Persistent Photocapacitance in Proton Irradiated Β-Ga2O3 Films Doped With Si

APL Materials
Materials ScienceEngineering
2018English

4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding

ECS Solid State Letters
2015English

Effect of High-Energy Protons on 4h-SiC Radiation Detectors

Lithuanian Journal of Physics
AstronomyPhysics
2005English

The Role of Frenkel Defect Diffusion in Dynamic Annealing in Ion-Irradiated Si

Scientific Reports
Multidisciplinary
2017English

Author Correction: Universality of Defect-Skyrmion Interaction Profiles

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2019English

Defect Structure and Evolution in Silicon Carbide Irradiated to 1 Dpa-SiC at 1100 C

2002English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy