Resistive Switching Memory: Reliable Ge2 Sb2 Te5 -Integrated High-Density Nanoscale Conductive Bridge Random Access Memory Using Facile Nitrogen-Doping Strategy (Adv. Electron. Mater. 11/2018)
Advanced Electronic Materials - Germany
doi 10.1002/aelm.201870052
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Date
November 1, 2018
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Wiley