A Temperature Dependent Measurement of the Carrier Velocity vs. Electric Field Characteristic for As-Grown and H-Intercalated Epitaxial Graphene on SiC

Journal of Applied Physics - United States
doi 10.1063/1.4807162
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC Substrates

APL Materials
Materials ScienceEngineering
2015English

Epitaxial Growth of Graphene on SiC Surfaces

Hyomen Kagaku
2011English

Structural and Electronic Properties of Li-Intercalated Graphene on SiC(0001)

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Epitaxial Graphene on SiC(0001): More Than Just Honeycombs

2011English

Surface Step Structures of SiC Epitaxial Layers Grown on Off-Axis SiC (0001)

Materia Japan
2001English

Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

Effects of Rhenium on Graphene Grown on SiC(0001)

Journal of Electron Spectroscopy and Related Phenomena
Condensed Matter PhysicsOpticsRadiationMolecular Physics,SpectroscopyTheoretical ChemistryOpticalAtomicMagnetic MaterialsElectronicPhysical
2018English

Observation of the Intrinsic Bandgap Behaviour in As-Grown Epitaxial Twisted Graphene

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2015English

Substrate Doping Effects on Raman Spectrum of Epitaxial Graphene on SiC

Journal of Applied Physics
AstronomyPhysics
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy