Enhancement of Photoconductivity by Carrier Screening Effect in N-GaSb/N-InAs/P-GaSb Heterostructure With Single Deep Quantum Well
Журнал технической физики
doi 10.21883/ftp.2018.04.45825.14
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2018
Authors
Publisher
Ioffe Institute Russian Academy of Sciences