AlGaN Nanostructures With Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 Nm

Journal of Electronic Materials - United States
doi 10.1007/s11664-016-5091-3
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Deep Ultraviolet Emitting AlGaN Quantum Wells With High Internal Quantum Efficiency

Applied Physics Letters
AstronomyPhysics
2009English

Extremely High Internal Quantum Efficiencies From AlGaN/AlN Quantum Wells Emitting in the Deep Ultraviolet Spectral Region

Applied Physics Letters
AstronomyPhysics
2011English

Ultraviolet Emission Efficiency Enhancement of A-Plane AlGaN/GaN Multiple-Quantum-Wells With Increasing Quantum Well Thickness

Applied Physics Letters
AstronomyPhysics
2012English

Polymorphism Below Room Temperature

Acta Crystallographica Section A Foundations of Crystallography
2008English

Growth of (In)AlGaN Compound Semiconductors and Their Application to 300-Nm-Band High-Intensity UV-LEDs

The Review of Laser Engineering
2002English

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions From AlGaN-based Quantum Wells

Scientific Reports
Multidisciplinary
2017English

High-Quantum-Efficiency Er^3+ Fiber Lasers Pumped at 980 Nm

Optics Letters
OpticsAtomicMolecular Physics,
1989English

High Density GaN/AlN Quantum Dots for Deep UV LED With High Quantum Efficiency and Temperature Stability

Scientific Reports
Multidisciplinary
2014English

Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy