The Determination and Interpretation of Electrically Active Charge Density Profiles at Reverse Biased P-N Junctions From Electron Holograms

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927602101437
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature

2014English

Hot Electron Emission From Silicon P‐n Junctions Produced by Ion Implantation

Journal of Applied Physics
AstronomyPhysics
1966English

Silicon P–n Junctions Biased Above Breakdown Used as Monitors of Carrier Lifetime

Materials Science in Semiconductor Processing
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Probing Ultrafast Changes of Spin and Charge Density Profiles With Resonant XUV Magnetic Reflectivity at the Free-Electron Laser FERMI

Structural Dynamics
InstrumentationRadiationCondensed Matter PhysicsSpectroscopy
2017English

Problems Concerning Application of Electron-Holography Observation of P-N Junctions From the Viewpoint of the Semiconductor Industry

Microscopy and Microanalysis
Instrumentation
2003English

Observing a P-N Junction in a Reverse-Biased GaP Light-Emitting Diode by Combining Electron Holography and Focused-Ion-Beam Milling

Microscopy and Microanalysis
Instrumentation
2003English

Comparison of Phase Slippage Processes in Josephson Junctions and Charge-Density Wave Stacked Junctions

Low Temperature Physics
AstronomyPhysics
2012English

Interactive Electron-Density Map Interpretation: fromINTERtoO

Acta Crystallographica Section D Biological Crystallography
2004English

Axial P–n Junctions in GaN Microrods

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy