Production Technology of High Performance III-Nitride Devices

doi 10.1364/acpc.2012.ath4f.2
Full Text
Abstract

Available in full text

Date
Authors
Publisher

OSA

Related search

GaN Substrates for III-Nitride Devices

Proceedings of the IEEE
Electronic EngineeringElectricalComputer Science
2010English

Development of III-Nitride Based Electron Devices

Zairyo/Journal of the Society of Materials Science, Japan
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Flexible Gallium Nitride: Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices (Adv. Mater. 47/2017)

Advanced Materials
Mechanics of MaterialsMaterials ScienceNanotechnologyMechanical EngineeringNanoscience
2017English

Optically Active Dilute-Antimonide III-nitride Nanostructures for Optoelectronic Devices

Applied Physics Letters
AstronomyPhysics
2017English

III-nitride Research at Nagoya

TRENDS IN THE SCIENCES
2015English

Machining Performance of Sputter-Deposited (Al0.34Cr0.22Nb0.11Si0.11Ti0.22)50N50 High-Entropy Nitride Coatings

Coatings
SurfacesFilmsCoatingsMaterials ChemistryInterfaces
2015English

Interface Engineering for High Performance Graphene Electronic Devices

Nano Convergence
Materials ScienceEngineering
2015English

III-V/Silicon Photonics for Optical Interconnects: Bonding Technology and Integrated Devices

2007English

High-Energy Spectroscopic Study of the III-V Nitride-Based Diluted Magnetic semiconductorGa1−xMnxN

Physical Review B
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy