Quantitative Measurement of Indium Atom Distribution Inside InGaN QWs With Atomic Sensitivity

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927603442347
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Influence of Vacancies on Indium Atom Distribution in InGaAs and InGaN Compounds

Lithuanian Journal of Physics
AstronomyPhysics
2015English

Indium Clustering in A-Plane InGaN Quantum Wells as Evidenced by Atom Probe Tomography

Applied Physics Letters
AstronomyPhysics
2015English

Role of Underlayer for Efficient CoreShell InGaN QWs Grown on Mplane GaN Wire Sidewalls

English

Real-Space Measurement of the Potential Distribution Inside Organic Semiconductors

Physical Review Letters
AstronomyPhysics
2002English

Development of Indium-Rich InGaN Epilayers for Integrated Tandem Solar Cells

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2013English

Measurement Sensitivity Improvement of All-Optical Atomic Spin Magnetometer by Suppressing Noises

Sensors
InstrumentationInformation SystemsElectronic EngineeringBiochemistryAnalytical ChemistryMolecular Physics,ElectricalAtomicMedicineOptics
2016English

3D Atom Probe: Chemical Analysis With (Near) Atomic Resolution

Microscopy and Microanalysis
Instrumentation
2003English

Advantages of Blue InGaN Light-Emitting Diodes With InGaN-AlGaN-InGaN Barriers

Applied Physics Letters
AstronomyPhysics
2012English

Atomic Beam Manipulation and Atom Lithography

The Review of Laser Engineering
2004English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy