Amanote Research

Amanote Research

    RegisterSign In

Localization and Mobility Gap in the Topological Anderson Insulator

Physical Review B
doi 10.1103/physrevb.85.035107
Full Text
Open PDF
Abstract

Available in full text

Date

January 12, 2012

Authors
Yan-Yang ZhangRui-Lin ChuFu-Chun ZhangShun-Qing Shen
Publisher

American Physical Society (APS)


Related search

Localization and Transport in a Strongly Driven Anderson Insulator

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Anderson Localization at the Hybridization Gap in a Plasmonic System

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Weak Localization of Bulk Channels in Topological Insulator Thin Films

Physical Review B
2011English

A Large-Energy-Gap Oxide Topological Insulator Based on the Superconductor BaBiO3

Nature Physics
AstronomyPhysics
2013English

Doping-Dependent Studies of the Anderson-Mott Localization in Polyaniline at the Metal-Insulator Boundary

Physical Review B
2002English

Anderson Localization

2019English

Weak Localization Effect in Topological Insulator Micro Flakes Grown on Insulating Ferrimagnet BaFe12O19

Scientific Reports
Multidisciplinary
2016English

Evaluation of Mobility in Thin Bi2Se3 Topological Insulator for Prospects of Local Electrical Interconnects

Scientific Reports
Multidisciplinary
2014English

Microscopy and Chemical Analysis of Topological Insulator Bi2Se3 and Topological Crystalline Insulator SnTe Nanostructures

Microscopy and Microanalysis
Instrumentation
2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy