Amanote Research
Register
Sign In
Partial Rank Modulation for Flash Memories
doi 10.1109/isit.2010.5513597
Full Text
Open PDF
Abstract
Available in
full text
Date
June 1, 2010
Authors
Zhiying Wang
Jehoshua Bruck
Publisher
IEEE
Related search
FSAF: File System Aware Flash Translation Layer for NAND Flash Memories
Data Movement in Flash Memories
Energy-Aware Error Control Coding for Flash Memories
Position Modulation Code for Rewriting Write-Once Memories
IEEE Transactions on Information Theory
Computer Science Applications
Information Systems
Library
Information Sciences
Constant-Weight Gray Codes for Local Rank Modulation
IEEE Transactions on Information Theory
Computer Science Applications
Information Systems
Library
Information Sciences
Transparent Support for Partial Rollback in Software Transactional Memories
Lecture Notes in Computer Science
Computer Science
Theoretical Computer Science
Verify Level Control Criteria for Multi-Level Cell Flash Memories and Their Applications
Eurasip Journal on Advances in Signal Processing
Hardware
Electronic Engineering
Signal Processing
Electrical
Architecture
Self-Learning Hot Data Prediction: Where Echo State Network Meets NAND Flash Memories
IEEE Transactions on Circuits and Systems I: Regular Papers
Electronic Engineering
Electrical
Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories With Different Blocking Layer Materials
Journal of Low Power Electronics and Applications
Electronic Engineering
Electrical