Tellurium - Modified Surface States of GaAs(001) and InAs(001)

Brazilian Journal of Physics - United States
doi 10.1590/s0103-97331999000400045
Full Text
Abstract

Available in full text

Date
Authors
Publisher

FapUNIFESP (SciELO)

Related search

First-Principles Study of InAs/GaAs(001) Heteroepitaxy

English

Self-Assembly of InAs Quantum Dots on GaAs(001) by Molecular Beam Epitaxy

Frontiers of Physics
AstronomyPhysics
2015English

InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2008English

Surface Reconstruction Stability and Configurational Disorder on Bi-Terminated GaAs(001)

Physical Review B
2013English

Superstructures of Se-Treated GaAs(001) Surface Studied by Scanning Tunneling Microscopy.

Hyomen Kagaku
1994English

Antimony-Stabilized GaAs(001)(2×4) Reconstructions

Physical Review B
1997English

Spectroscopy of the Electronic States in InAs Quantum Dots Grown onInxAl1−xAs/InP(001)

Physical Review B
2004English

Surface Effects on Shape, Self-Organization and Photoluminescence of InAs Islands Grown on InAlAs/InP(001)

Journal of Applied Physics
AstronomyPhysics
2002English

SrTiO3 (001) ( × )R33.7° Surface Reconstruction

Microscopy and Microanalysis
Instrumentation
2009English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy