Amanote Research

Amanote Research

    RegisterSign In

Volume and Temperature Dependence of the Transverse Charge and the Ionicity of Tetrahedral Semiconductors

Le Journal de Physique Colloques
doi 10.1051/jphyscol:19816190
Full Text
Open PDF
Abstract

Available in full text

Date

December 1, 1981

Authors
D. OlegoM. CardonaP. Vogl
Publisher

EDP Sciences


Related search

Empirical Temperature Dependence of the Refractive Index of Semiconductors

Journal of Applied Physics
AstronomyPhysics
1995English

Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors

English

Temperature Dependence of the Fundamental Edge of Germanium and Zinc-Blende-Type Semiconductors

Physical Review B
1975English

Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

Advances in Condensed Matter Physics
Condensed Matter Physics
2017English

Temperature and Pressure Dependence of the Si(222) Forbidden Reflection and the Vibration of the Bonding Charge

Physical Review B
1974English

Temperature Dependence of Exciton and Charge Carrier Dynamics in Organic Thin Films

Physical Review B
2011English

The Charge Carrier Density Influence and Thermal Effects on Charge Transport in Organic Semiconductors

Revista Processos Químicos
2015English

The Charge-Dependence of Nuclear Forces

Mathematical Proceedings of the Cambridge Philosophical Society
Mathematics
1938English

Temperature-Dependence of Debye-Waller Factors of Semiconductors Presented in Terms of Cumulant Expansion

Global Journal of Engineering Sciences
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy