X-Ray Reflectivity Method for the Characterization of InGaN/GaN Quantum Well Interface

Physica Status Solidi (B): Basic Research - United Kingdom
doi 10.1002/pssb.201600664
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

MRS Internet Journal of Nitride Semiconductor Research
1999English

Confined and Interface Optical Phonon Emission in GaN/InGaN Double Barrier Quantum Well Heterostructures

PLoS ONE
Multidisciplinary
2019English

Characterization of InGaN/GaN Quantum Well Growth Using Monochromated Valence Electron Energy Loss Spectroscopy

Journal of Applied Physics
AstronomyPhysics
2014English

Electron Spillover Effects in InGaN∕GaN Quantum-Well Lasers

Journal of Applied Physics
AstronomyPhysics
2007English

InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2000English

Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness

Applied Physics Letters
AstronomyPhysics
2006English

Effect of Threading Defects on InGaN∕GaN Multiple Quantum Well Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2007English

Quantum Shift of Band-Edge Stimulated Emission in InGaN–GaN Multiple Quantum Well Light-Emitting Diodes

Applied Physics Letters
AstronomyPhysics
1997English

Effect of Auger Recombination and Leakage on the Droop in InGaN/GaN Quantum Well LEDs

Optics Express
OpticsAtomicMolecular Physics,
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy