Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs
IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2011.2161992
Full Text
Open PDFAbstract
Available in full text
Date
October 1, 2011
Authors
Publisher
Institute of Electrical and Electronics Engineers (IEEE)