Amanote Research

Amanote Research

    RegisterSign In

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Advances in OptoElectronics - United States
doi 10.1155/2011/459130
Full Text
Open PDF
Abstract

Available in full text

Categories
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
Date

January 1, 2011

Authors
V. G. IvanovG. V. Ivanov
Publisher

Hindawi Limited


Related search

Physical Based Schottky Barrier Diode Modeling for THz Applications

2013English

Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

Hybrid Antiresonant Metamaterial Waveguides for THz and IR

2016English

Quantum Cascade Lasers for IR and THz Spectroscopy

SPIE Newsroom
2013English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
2019English

IR Detectors for Spaceborne Laser Receivers

SPIE Newsroom
2010English

Reduction of Schottky Barrier Height for N-Type Ge Contact by Using Sn Electrode

2013English

Two-Dimensional Ferromagnet/Semiconductor Transition Metal Dichalcogenide Contacts:p-Type Schottky Barrier and Spin-Injection Control

Physical Review B
2013English

Broadband THz to NIR Up-Converter for Photon-Type THz Imaging

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy