Spatially Correlated Structural and Optical Characterization of a Single InGaAs Quantum Well Fin Selectively Grown on Si by Microscopy and Cathodoluminescence Techniques

APL Materials - United States
doi 10.1063/1.4949761
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Electron Transport in Gated InGaAs and InAsP Quantum Well Wires in Selectively Grown InP Ridge Structures

Physica E: Low-Dimensional Systems and Nanostructures
Condensed Matter PhysicsOpticsMolecular Physics,NanoscienceOpticalAtomicMagnetic MaterialsNanotechnologyElectronic
2010English

Time-Resolved Cathodoluminescence of InGaAs/AlGaAs Tetrahedral Pyramidal Quantum Structures

Applied Physics B: Lasers and Optics
AstronomyPhysics
2006English

Spatially Resolved in and as Distributions in InGaAs/GaP and InGaAs/GaAs Quantum Dot Systems

Microscopy and Microanalysis
Instrumentation
2014English

Structural and Optical Characterization of Biosynthesized CdS Quantum Dots

Microscopy and Microanalysis
Instrumentation
2015English

Photoluminescence of InGaAs/GaAsBi/InGaAs Type-Ii Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
2016English

Structural and Optical Characterization of Pure Si-Rich Nitride Thin Films

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2013English

Photoluminescence Characterization of Single Heterojunction Quantum Well Structures

Applied Physics Letters
AstronomyPhysics
1987English

Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

Advances in Materials Science and Engineering
Materials ScienceEngineering
2016English

Tunable Switching Dynamics of a Single Si Dopant inGaAs(110)

Physical Review B
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy