An Lonised-Impurity Scattering Model for 3D Monte Carlo Device Simulation With Discrete Impurity Distribution

VLSI Design - United States
doi 10.1155/2001/96951
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Hindawi Limited

Related search

Conductance of Quantum Impurity Models From Quantum Monte Carlo

Physical Review B
2010English

The Backward Monte Carlo Method for Semiconductor Device Simulation

Journal of Computational Electronics
Electronic EngineeringElectronicMolecular Physics,SimulationOpticalElectricalAtomicMagnetic MaterialsModelingOptics
2018English

Improved Monte Carlo Model for Multiple Scattering Calculations

Chinese Optics Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2012English

Monte-Carlo Simulation Model for Predicting the Tensile Strength Distribution of Cross Laminated Timber

Zairyo/Journal of the Society of Materials Science, Japan
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2018English

Monte Carlo Device Simulations

2011English

Secondary Electron Energy Distribution From Electrode Surface With Impurity

IEEJ Transactions on Fundamentals and Materials
Electronic EngineeringElectrical
1995English

Screening Effect and Impurity Scattering in Monolayer Graphene

Journal of the Physical Society of Japan
AstronomyPhysics
2006English

A Holographic Two-Impurity Kondo Model

Journal of High Energy Physics
High Energy PhysicsNuclear
2016English

An Integrated Model of Impurity Migration and Wall Composition Dynamics for Tokamaks

Journal of Nuclear Materials
High Energy PhysicsMaterials ScienceEngineeringNuclear EnergyNuclear
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy