Thermal Maps of GaAs P-Hemt: A Novel System Based on the Photocurrent Spectral Analysis

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2007.891868
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

A 12 GHz Oscillator Based on a GaAs HEMT Integrated to a HTS Resonator

Le Journal de Physique IV
1994English

Theoretical Analysis of the Spectral Photocurrent Distribution of Semiconductors

2013English

Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

2006English

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

2011English

Analysis of Influence Factors of Thermal Aberrations Based on the Small Lens System

Laser and Optoelectronics Progress
OpticsElectronic EngineeringElectricalAtomicMolecular Physics,
2014English

Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers

IEEE Journal of Solid-State Circuits
Electronic EngineeringElectrical
2000English

The UHF Oscillators Based on a HEMT Structure With Negative Conductivity

2015English

Power Spectral Analysis of a Dynamical System

Physics Letters, Section A: General, Atomic and Solid State Physics
AstronomyPhysics
1980English

Design and Realization of Novel GaAs Based Laser Concepts

Springer Theses
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy