Amanote Research

Amanote Research

    RegisterSign In

On the Interpretation of Local Negative Mobilities in Nanoscale Semiconductor Devices

IEEE Transactions on Electron Devices - United States
doi 10.1109/ted.2007.898241
Full Text
Open PDF
Abstract

Available in full text

Categories
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
Date

July 1, 2007

Authors
Simon C. BruggerAndreas Schenk
Publisher

Institute of Electrical and Electronics Engineers (IEEE)


Related search

Simulating Nanoscale Semiconductor Devices

International Journal of High Speed Electronics and Systems
Electronic EngineeringHardwareOpticalElectricalArchitectureMagnetic MaterialsElectronic
2006English

Probing Nanoscale Local Lattice Strains in Semiconductor Nanostructures and Devices by Transmission Electron Microscopy

Microscopy and Microanalysis
Instrumentation
2018English

Charge Transport in Nanoscale Vertical Organic Semiconductor Pillar Devices

Scientific Reports
Multidisciplinary
2017English

Nanoscale Semiconductor Electronics

2015English

Semiconductor Physics and Semiconductor Devices

The Journal of the Institute of Television Engineers of Japan
1974English

Optimization Problems of Nanoscale Semiconductor Heterostructures

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
2016English

Basics of Semiconductor Devices

2016English

Passivation of Semiconductor Devices.

HYBRIDS
1986English

Physics of Semiconductor Devices

2002English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy