The Measured Dependence of the Lateral Ambipolar Diffusion Length on Carrier Injection-Level in Stranski-Krastanov Quantum Dot Devices

Journal of Applied Physics - United States
doi 10.1063/1.3471812
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Ambipolar Carrier Diffusion in In0.53Ga0.47As Single Quantum Wells

Brazilian Journal of Physics
AstronomyPhysics
1999English

Tuning InAs/GaAs Quantum Dot Properties Under Stranski-Krastanov Growth Mode for 1.3 Μm Applications

Journal of Applied Physics
AstronomyPhysics
2002English

Stranski-Krastanov InN/InGaN Quantum Dots Grown Directly on Si(111)

Applied Physics Letters
AstronomyPhysics
2015English

Anomalous Stranski-Krastanov Growth of (111)-Oriented Quantum Dots With Tunable Wetting Layer Thickness

Scientific Reports
Multidisciplinary
2019English

Direct Determination of the Ambipolar Diffusion Length in Strained InxGa1−xAs/InP Quantum Wells by Cathodoluminescence

Applied Physics Letters
AstronomyPhysics
1993English

Direct Determination of the Ambipolar Diffusion Length in GaAs/AlGaAs Heterostructures by Cathodoluminescence

Applied Physics Letters
AstronomyPhysics
1989English

Lateral Diffusion in an Archipelago. Distance Dependence of the Diffusion Coefficient

Biophysical Journal
Biophysics
1989English

Influence of the Carrier Reservoir Dimensionality on Electron-Electron Scattering in Quantum Dot Materials

Physical Review B
2013English

Critical Role of a Buried Interface in the Stranski-Krastanov Growth of Metallic Nanocrystals: Quantum Size Effects in Ag/Si(111)-(7×7)

Physical Review Letters
AstronomyPhysics
2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy