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Ionic Liquid Gating on Atomic Layer Deposition Passivated GaN: Ultra-High Electron Density Induced High Drain Current and Low Contact Resistance
Applied Physics Letters
- United States
doi 10.1063/1.4950816
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Categories
Astronomy
Physics
Date
May 16, 2016
Authors
Hong Zhou
Yuchen Du
Peide D. Ye
Publisher
AIP Publishing
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