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Segregation of Ion Implanted Sulfur in Si(100) After Annealing and Nickel Silicidation
Journal of Applied Physics
- United States
doi 10.1063/1.2759877
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Categories
Astronomy
Physics
Date
July 15, 2007
Authors
Q. T. Zhao
U. Breuer
St. Lenk
S. Mantl
Publisher
AIP Publishing