Comparative Investigation of Endurance and Bias Temperature Instability Characteristics in Metal-Al2O3-Nitride-Oxide-Semiconductor (MANOS) and Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Charge Trap Flash Memory
Journal of Semiconductor Technology and Science - South Korea
doi 10.5573/jsts.2012.12.4.449
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Date
December 30, 2012
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The Institute of Electronics Engineers of Korea