Modeling an Influence of Internal Mechanical Stresses on the Rate of Growth of Oxygen Precipitates in Silicon
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
doi 10.17073/1609-3577-2012-2-37-42
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Date
March 16, 2015
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National University of Science and Technology MISiS