Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.49.014103
Full Text
Open PDFAbstract
Available in full text
Date
January 20, 2010
Authors
Publisher
Japan Society of Applied Physics