Analysis and Origin of Point Defects in Silicon After Liquid Phase Transient Annealing

Le Journal de Physique Colloques
doi 10.1051/jphyscol:1983543
Full Text
Abstract

Available in full text

Date
Authors
Publisher

EDP Sciences

Related search

INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING

Le Journal de Physique Colloques
1990English

Topological Point Defects in Nematic Liquid Crystals

Philosophical Magazine
Condensed Matter Physics
2006English

Ab-Initio Modeling of Point Defects, Impurities and Diffusion in Silicon

ECS Meeting Abstracts
2008English

Transient-Liquid-Phase and Liquid-Film-Assisted Joining of Ceramics

Advances in Science and Technology
2006English

Transient-Liquid-Phase and Liquid-Film-Assisted Joining of Ceramics

Journal of the European Ceramic Society
CompositesMaterials ChemistryCeramics
2006English

Polymorphism in Glassy Silicon: Inherited From Liquid-Liquid Phase Transition in Supercooled Liquid

Scientific Reports
Multidisciplinary
2015English

Colloquium: Disclination Loops, Point Defects, and All That in Nematic Liquid Crystals

Reviews of Modern Physics
AstronomyPhysics
2012English

Self-Diffusion in Silicon: Similarity Between the Properties of Native Point Defects

Physical Review Letters
AstronomyPhysics
1999English

Effect of Germanium Doping on the Annealing Characteristics of Oxygen and Carbon-Related Defects in Czochralski Silicon

Journal of Applied Physics
AstronomyPhysics
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy