Simulation and Experimental Characterization of a Unified Memory Device With Two Floating-Gates

IFIP Advances in Information and Communication Technology - United States
doi 10.1007/978-3-642-45073-0_12
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Berlin Heidelberg

Related search

Unified Approach for Universal Quantum Gates in a Coupled Superconducting Two-Qubit System With Fixed Always-On Coupling

Physical Review B
2006English

Fabrication and Characterization of a GaAs-based Three-Terminal Nanowire Junction Device Controlled by Double Schottky Wrap Gates

Applied Physics Letters
AstronomyPhysics
2007English

Experimental and Numerical Study of an Anti-Sloshing Floating Device for Membrane-Type LNG Tanks

Journal of the Japan Society of Naval Architects and Ocean Engineers
2013English

Low-Voltage High-Speed Programming/Erasing Floating-Gate Memory Device With Gate-All-Around Polycrystalline Silicon Nanowire

Applied Physics Letters
AstronomyPhysics
2013English

Experimental Characterization and Simulation of Amino Acid and Peptide Interactions With Inorganic Materials

Engineering in Life Sciences
BioengineeringEnvironmental EngineeringBiotechnology
2017English

Constructing Two-Qubit Gates With Minimal Couplings

Physical Review A
2009English

New Floating Gate Memory With Excellent Retention Characteristics

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2019English

Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor With Floating Junction Connected to Floating Gate

Journal of Sensors
ControlSystems EngineeringInstrumentationElectricalElectronic Engineering
2015English

Simulation and Experimental Study on the Self-Excited Oscillation Jet Device

2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy