Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor

Journal of Applied Physics - United States
doi 10.1063/1.372217
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Monte Carlo Study of Kink Effect in Short-Channel InAlAs/InGaAs High Electron Mobility Transistors

Journal of Applied Physics
AstronomyPhysics
2003English

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

Acta Physica Polonica A
AstronomyPhysics
2011English

InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
1992English

Admittance Spectroscopy of InAlAs/InGaAs Single‐quantum‐well Structure With High Concentration of Electron Traps in InAlAs Layers

Journal of Applied Physics
AstronomyPhysics
1995English

InAlAs/InGaAs/InP HEMTs С Композитным Каналом И Улучшенными Пробивными Характеристиками

Журнал технической физики
2019English

High-Resolution STEM Study of InGaAs/InAlAs and Si/Ge Heterostructures

Acta Crystallographica Section A Foundations of Crystallography
2011English

Growth and Properties of InGaAs/FeAl/InAlAs/InP Heterostructures for Buried Reflector/Interconnect Applications in InGaAs Thermophotovoltaic Devices

1999English

Field Distribution in Waveguide of Mid-Infrared Strain-Compensated InAlAs/InGaAs/InP Quantum Cascade Laser

Optical and Quantum Electronics
Electronic EngineeringElectronicMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsOptics
2017English

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well With Different Thickness

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy