InGaP/GaAs/InGaP Double-Heterojunction Bipolar Transistors Grown by Solid-Source Molecular-Beam Epitaxy With a Valved Phosphorus Cracker
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
doi 10.1116/1.588905
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Date
May 1, 1996
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American Vacuum Society