The Effect of Trapping States on Tunneling in Metal‐semiconductor Junctions

Applied Physics Letters - United States
doi 10.1063/1.1652641
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Scanning Tunneling Potentiometry of Semiconductor Junctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2002English

Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature

Applied Physics Letters
AstronomyPhysics
2005English

Multiple Percolation Tunneling Staircase in Metal-Semiconductor Nanoparticle Composites

Applied Physics Letters
AstronomyPhysics
2014English

Integration of a Resonant‐tunneling Structure With a Metal‐semiconductor Field‐effect Transistor

Applied Physics Letters
AstronomyPhysics
1987English

Scanning Tunneling Microscopy(STM). Application for Material Science. Metal on Semiconductor.

Nihon Kessho Gakkaishi
1993English

Magnon Scattering and Tunneling Through Localized States in Magnetic Tunnel Junctions

Journal of Applied Physics
AstronomyPhysics
2002English

Relationship Between the Barrier and Magnetoresistance Effect in Ferromagnetic Tunneling Junctions

Journal of the Magnetics Society of Japan
1997English

Microwave Spectroscopy of Spinful Andreev Bound States in Ballistic Semiconductor Josephson Junctions

Nature Physics
AstronomyPhysics
2017English

Single Electron Tunneling Transistor With Tunable Barriers Using Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor

Applied Physics Letters
AstronomyPhysics
2006English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy