(PDF) Raised Source/Drain (RSD) for 50nm MOSFETs - Effect

Raised Source/Drain (RSD) for 50nm MOSFETs - Effect of Epitaxy Layer Thickness on Short Channel Effects

doi 10.1109/essderc.2003.1256854

Full Text

Abstract

Available in full text

Date

Unknown

Authors

Publisher

IEEE

Related search

Comparison of Raised and Schottky Source/Drain MOSFETs Using a Novel Tunneling Contact Model

English

The Effects of Nitridation and Re-Oxidation on Drain Leakage Current in N-Channel MOSFETs

English

Investigation of the Gate Capacitance Characteristics of Short Channel MOSFETs.

English

Polycrystalline Silicon Thin-Film Transistor With Self-Aligned SiGe Raised Source/Drain

Applied Physics Letters

English

Characterization of Ultrathin SOI Film and Application to Short Channel MOSFETs

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Physical Mechanism of Source and Drain Resistance Reduction in Oxide TFT ～Towards High-Performance Short-Channel InGaZnO TFT～

English

60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs

Indian Journal of Materials Science

English

The Effect of Substrate Purity on Short-Channel Effects of GaAs MESFET's

English

The Impact of Drain Impurity Profile and Junction Depth on Submicron MOSFETs

English