Amanote Research
Register
Sign In
Strong Electron Correlation Effects in Non-Volatile Electronic Memory Devices
doi 10.1109/nvmt.2005.1541421
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
I.H. Inoue
M.J. Rozenberg
S. Yasuda
M.J. Sanchez
M. Yamazaki
T. Manago
H. Akinaga
H. Takagi
H. Akoh
Y. Tokura
Publisher
IEEE
Related search
Non-Volatile Memory Devices Based on Chalcogenide Materials
Donor–Acceptor Core–Shell Nanoparticles and Their Application in Non‐Volatile Transistor Memory Devices
Macromolecular Rapid Communications
Organic Chemistry
Polymers
Materials Chemistry
Plastics
Non-Volatile Resistive Memory Devices Based on Solution-Processed Ultrathin Two-Dimensional Nanomaterials
Chemical Society Reviews
Chemistry
Nano-Imaging of Organic Charge Retention Effects: Implications for Non-Volatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices
ACS Applied Nano Materials
Materials Science
Reconfigurable Electronics and Non-Volatile Memory Research
Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties (Phys. Status Solidi RRL 5/2019)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
High-Speed Non-Volatile Optical Memory: Achievements and Challenges
Electronics (Switzerland)
Control
Electronic Engineering
Signal Processing
Computer Networks
Systems Engineering
Hardware
Communications
Electrical
Architecture
Non-Volatile Memory Based on the Ferroelectric Photovoltaic Effect
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics
Correlation Effects and Hidden Spin-Orbit Entangled Electronic Order in Parent and Electron-Doped Iridates Sr2IrO4
Physical Review X
Astronomy
Physics
