Polishing Silicon Modification Layer on Silicon Carbide Surface by Ion Beam Figuring

Chinese Optics Letters - China
doi 10.3788/col201412.s22206
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Shanghai Institute of Optics and Fine Mechanics

Related search

Surface Modification on a Silicon Carbide Mirror for Space Application

Chinese Optics Letters
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2010English

Formation of Silicon Carbide in the Surface Layer of Metals by Dual High Energy Ion Implantation

Materials Transactions, JIM
1999English

Multifractal Characterization of Epitaxial Silicon Carbide on Silicon

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2017English

Biocompatibility Between Silicon or Silicon Carbide Surface and Neural Stem Cells

Scientific Reports
Multidisciplinary
2019English

Low-Energy Mass-Selected Ion Beam Deposition of Silicon Carbide With Bernas-Type Ion Source Using Methylsilane

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2019English

Silicon Surface Passivation by Atomic Layer Deposited Al2O3

Journal of Applied Physics
AstronomyPhysics
2008English

From the Buffer Layer to Graphene on Silicon Carbide: Exploring Morphologies by Computer Modeling

Frontiers in Materials
Materials Science
2019English

Silicon Carbide Photonics

2014English

The Analysis of Friction Properties After Laser Texturizing of the Silicon Carbide Surface Layer

MATEC Web of Conferences
Materials ScienceEngineeringChemistry
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy