Random Telegraph Signal Amplitudes in Sub 100 Nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

doi 10.1109/iedm.2000.904311
Full Text
Abstract

Available in full text

Date

Unknown

Authors
Publisher

IEEE

Related search

Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs

2004English

Random Telegraph Signal (RTS) in the Euclid IR H2RGs

2018English

Sub-40 Nm SOI V-Groove N-MOSFETs

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2002English

Coulomb Attractive Random Telegraph Signal in a Single-Walled Carbon Nanotube

Physical Review B
2006English

Random Telegraph Signal in Nanoscale Back-Side Charge Trapping Memories

Applied Physics Letters
AstronomyPhysics
2006English

Sub-10-Nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Optimum TiSi2Ohmic Contact Process for Sub-100 Nm Devices

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2004English

PAG Incorporated Polymeric Resists for Sub-100 Nm Patterning at 193 Nm Exposure

Journal of Photopolymer Science and Technology
Organic ChemistryPolymersMaterials ChemistryPlastics
2006English

Analysis of the Relationship Between Random Telegraph Signal and Negative Bias Temperature Instability

2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy